Configurable analog front-end for mutual capacitance sensing and self capacitance sensing

ABSTRACT

Capacitance sensing circuits and methods are provided. A dual mode capacitance sensing circuit includes a capacitance-to-voltage converter having an amplifier and an integration capacitance coupled between an output and an inverting input of the amplifier, and a dual mode switching circuit responsive to mutual mode control signals for a controlling signal supplied from a capacitive touch matrix to the capacitance-to-voltage converter in a mutual capacitance sensing mode and responsive to self mode control signals for controlling signals supplied from the capacitive touch matrix to the capacitance-to-voltage converter in a self capacitance sensing mode, wherein the capacitance sensing circuit is configurable for operation in the mutual capacitance sensing mode or the self capacitance sensing mode.

CROSS REFERENCE TO RELATED APPLICATION

This application is a continuation-in-part of U.S. application Ser. No. 13/618,967 filed Sep. 14, 2012, which is hereby incorporated by reference in its entirety.

FIELD OF THE INVENTION

This invention relates to capacitance sensing and, more particularly, to an analog front end that is configurable for capacitance sensing in a mutual sensing mode or in a self sensing mode.

BACKGROUND

A touch screen is a device that can detect an object in contact with or in proximity to a display area. The display area can be covered with a touch-sensitive matrix that can detect a user's touch by way of a finger or stylus, for example. Touch screens are used in various applications such as mobile phones and other mobile devices. A touch screen may enable various types of user input, such as touch selection of items on the screen or alphanumeric input via a displayed virtual keypad. Touch screens can measure various parameters of the user's touch, such as the location, duration, etc.

One type of touch screen is a capacitive touch screen. A capacitive touch screen may include a matrix of conductive lines and conductive columns overlaid on the display area. The conductive lines and the conductive columns do not contact each other. The capacitive touch screen may be used for mutual capacitance sensing or for self capacitance sensing.

In mutual capacitance sensing, the capacitance between each line and column of the matrix may be sensed. A change in the sensed capacitance between a line and a column may indicate that an object, such as a finger, is touching the screen or is in proximity to the screen near the region of intersection of the line and column. Mutual capacitance sensing circuits employ a “forcing” signal applied to a column conductor of the capacitive touch matrix and sensing of the coupled signal on respective line conductors (or vice-versa).

In self capacitance sensing, the capacitance between a conductive element of the capacitive touch matrix and a reference voltage, such as ground, is sensed. A change in the sensed capacitance may indicate that an object, such as a finger, is touching the screen or is in proximity to the screen near the conductive element being sensed. The scanning of the capacitive touch matrix involves alternate sensing of the conductive lines and the conductive columns.

Mutual capacitance sensing and self capacitance sensing have advantages and disadvantages in different applications. Existing capacitance sensing circuitry is dedicated to either mutual capacitance sensing or self capacitance sensing.

SUMMARY OF THE INVENTION

According to embodiments of the invention, a configurable analog front end for capacitance sensing is provided. The analog front end is configurable for operation in a mutual capacitance sensing mode or a self capacitance sensing mode. In embodiments of the invention, a configurable single-ended to differential capacitance-to-voltage converter is provided. A floating shield may be used to enhance the sensitivity of self capacitance sensing. The differential capacitance-to-voltage converter limits substrate noise and therefore provides a very high intrinsic SNR (Signal-to-Noise Ratio).

In one aspect of the invention, a dual mode capacitance sensing circuit comprises a capacitance-to-voltage converter including an amplifier and an integration capacitance coupled between an output and an inverting input of the amplifier, and a dual mode switching circuit responsive to mutual mode control signals for controlling signals supplied from a capacitive touch matrix to the capacitance-to-voltage converter in a mutual capacitance sensing mode and responsive to self mode control signals for controlling signals supplied from the capacitive touch matrix to the capacitance-to-voltage converter in a self capacitance sensing mode, wherein the capacitance sensing circuit is configurable for operation in the mutual capacitance sensing mode or the self capacitance sensing mode.

In another aspect of the invention, a method for sensing capacitance comprises providing a capacitance sensing circuit including a capacitance-to-voltage converter and a dual mode switching circuit coupled between a capacitive touch matrix and the capacitance-to-voltage converter; controlling operation of the capacitance sensing circuit for mutual capacitance sensing in response to selection of a mutual capacitance sensing mode; and controlling operation of the capacitance sensing circuit for self capacitance sensing in response to selection of a self capacitance sensing mode.

In a further aspect of the invention, a capacitance sensing circuit coupled to a capacitive touch matrix and operable in a mutual capacitance sensing mode or in a self capacitance sensing mode is provided. The capacitance sensing circuit comprises a capacitance-to-voltage converter comprising an amplifier and an integration capacitance coupled between an output and an inverting input of the amplifier; first, second and third sense node switching elements coupled between a sense node of the capacitive touch matrix and an input voltage, a common mode voltage and ground, respectively; first, second and third force node switching elements coupled between a force node of the capacitive touch matrix and the input voltage, the common mode voltage and ground, respectively; first, second and third floating node switching elements coupled between a floating node and the input voltage, the common mode voltage and ground, respectively; a first switching element coupled between the sense node and a transmit node; a second switching element coupled between the force node and the transmit node; and an input switching element coupled between the transmit node and the inverting input of the amplifier.

BRIEF DESCRIPTION OF THE DRAWINGS

For a better understanding of the present invention, reference is made to the accompanying drawings, which are incorporated herein by reference and in which:

FIG. 1A is a schematic representation of a capacitive touch matrix;

FIG. 1B is an enlarged schematic diagram of a portion of the capacitive touch matrix, showing line and column conductors having diamond configurations;

FIG. 1C is a schematic diagram of a single intersection of a line and column, illustrating capacitances between line and column conductors;

FIG. 2 is a schematic diagram of a touch screen system;

FIG. 3 is a schematic diagram of a single-ended mutual capacitance sensing circuit in accordance with embodiments of the invention;

FIG. 4 is a timing diagram that illustrates operation of the mutual capacitance sensing circuit of FIG. 3;

FIGS. 5A and 5B are schematic diagrams of a single-ended self capacitance sensing circuit in accordance with embodiments of the invention;

FIG. 6 is a timing diagram that illustrates operation of the self capacitance sensing circuit of FIGS. 5A and 5B;

FIG. 7 is a schematic diagram of a dual mode capacitance sensing circuit in accordance with embodiments of the invention;

FIG. 8 is a timing diagram that illustrates operation of the capacitance sensing circuit of FIG. 7 in the mutual capacitance sensing mode;

FIG. 9 is a timing diagram that illustrates operation of the capacitance sensing circuit of FIG. 7 in the self capacitance sensing mode;

FIG. 10 is a schematic diagram of a dual mode capacitance sensing circuit including a capacitance-to-voltage converter with a single-ended input and a differential output in accordance with embodiments of the invention;

FIG. 11 is a timing diagram that illustrates operation of the dual mode capacitive sensing circuit in the self capacitance sensing mode with a high voltage input signal; and

FIG. 12 is a schematic diagram of a dual mode capacitance sensing circuit incorporating parasitic capacitance cancellation.

DETAILED DESCRIPTION

FIG. 1A shows an example of a touch screen having conductive lines 12 and conductive columns 13 of a capacitive touch matrix 10, arranged in a diamond pattern. The capacitive touch matrix 10 may be transparent to allow light from an underlying display unit to pass through the capacitive touch matrix 10 for viewing by a user. A plurality of conductors 14 may be provided for making contact to conductive lines 12 and conductive columns 13. Conductive lines 12 and conductive columns 13 may cover substantially the entire face of the touch screen, enabling touch and proximity detection at substantially any location on the touch screen.

FIG. 1B shows an enlarged portion of the capacitive touch matrix 10 in further detail. The capacitive touch matrix 10 includes a plurality of conductive columns 13 (C_(i)) and a plurality of conductive lines 12 (L_(j)). The conductive columns 13 extend vertically and the conductive lines 12 extend horizontally in FIG. 1B. The conductive lines 12 and the conductive columns 13 cross above or below each other at their intersection points, but are not in contact with one another. Each of the conductive lines 12 and the conductive columns 13 has conductors arranged in a diamond pattern. As a result, the conductive lines 12 and the conductive columns 13 are separated from each other by capacitive gaps 15. The diamond pattern may provide increased capacitance between conductive lines 12 and conductive columns 13, as compared with straight conductors. Capacitive touch matrix 10 may sense an object that modifies the fringing electric field above the capacitive gaps 15 when the object is in contact or in proximity to the screen.

FIG. 1C shows that when a conductive column C_(i) and a conductive line L_(j) are selected, the total capacitance between column C_(i) and line L_(j) is the sum of four capacitances 16 between the four adjacent diamond-shaped regions of column C_(i) and line L_(j). The capacitance between column C_(i) and line L_(j) can be sensed to determine whether an object is in contact with or in proximity to the touch screen above the region in which the four capacitances 16 are formed. Each conductive line 12 and conductive column 13 of the capacitive touch matrix may be selected in succession to sense the capacitances at each position of the touch screen.

FIG. 2 is a block diagram of a touch screen system 20 that includes the capacitive touch matrix 10 and an associated sensing circuit 21. The touch screen system of FIG. 2 is configured for mutual capacitance sensing. As discussed above, the capacitive touch matrix 10 may have a diamond pattern, which is not shown in FIG. 2 for clarity. The sensing circuit 21 includes a column switch matrix 22 and a line switch matrix 23 for selection of columns and lines of the capacitive touch matrix. The column switch matrix 22 may connect the columns of the touch matrix to the force line Fj (or reversely to the sense line Si) of the sensing circuit 21, and the line switch matrix 23 may connect the lines of the touch matrix to the sense line Si (or reversely to the force line Fj) of the sensing circuit 21. In the following description, it is understood that we may refer to sense line or sense node Si and force line or force node Fj rather than column Ci and line Lj. The column switch matrix 22 may receive a clock signal from a buffer 24 for timing the switch selection and scanning of the capacitive touch matrix. The line switch matrix 23 may select one or more lines for readout. The charge sensed from the capacitive touch matrix may be converted to a digital value by a capacitance-to-digital converter 25, as discussed below.

In mutual capacitance sensing, a forcing signal is applied to a column conductor (or to a line conductor), and a coupled signal is sensed on one or more line conductors (or column conductors). The lines and columns of the capacitive touch matrix 10 may be scanned in any suitable manner. For example, the capacitance may be sensed between column C₁ and lines L₁-L_(n), then sensed between column C₂ and lines L₁-L_(n), and so on until column C_(n) and lines L₁-L_(n). However, it should be appreciated that this is only an example of a suitable scanning sequence and that any suitable scanning sequence may be used.

At each scanning step, a measurement may be taken from the line/column pair that represents the capacitance between the selected line/column pair. For example, the capacitance between the selected line/column pair may be charged to a determined voltage value. The amount of charge stored depends on the capacitance between the line/column pair. The capacitance between the selected line and column may change when an object is touching the touch screen near the intersection area of the line and column and alters the electric field in this region. To determine whether an object is in the vicinity, the stored charge can be read out and converted into a voltage that is then digitized.

In self capacitance sensing, a forcing signal is applied to the column conductors, and the capacitance to ground is sensed on the same column conductors. Then, a forcing signal is applied to the line conductors, and the capacitance to ground is sensed on the same line conductors. The combined information from column sensing and line sensing indicates the location of a touch on the capacitive touch matrix. The sequence of sensing on column conductors and sensing on line conductors is repeated.

A schematic block diagram of a single-ended mutual capacitance sensing circuit in accordance with embodiments of the invention is shown in FIG. 3. An element of the capacitive touch matrix is represented by matrix element capacitance 100 ij. Capacitance 100 ij may have a value of Csij in the absence of a finger or other object and may have a value of Csij−ΔCsij when a finger or other object is present. Capacitance Csij represents the capacitance between a column conductor and a line conductor of the capacitive touch matrix, and capacitance ΔCsij represents the change in capacitance produced by a finger or other object touching or in proximity to the intersection between the column conductor and the line conductor of the capacitive touch matrix. Capacitance 100 ij is shown as connected between a force node F_(j) and a sense node S_(i). A forcing signal is applied to force node F_(j) and a sensing signal is read out at sense node S_(i).

A DC voltage VH is chopped by an input chopper 110 j at a modulation frequency fc to provide a squarewave output at frequency fc. Input chopper 110 j includes a switch 112 j coupled between voltage VH and force node F_(j), and a switch 114 j coupled between force node F_(j) and ground. The squarewave output of chopper 110 j causes the capacitance 100 ij to be charged. A sensing signal at sense node S_(i) is applied to a capacitance-to-voltage converter 120.

The capacitance-to-voltage converter 120 may include an amplifier 122 having an integration capacitance 124 (Cc) in a feedback path between an inverting input and an output of amplifier 122. A switch 126 is connected in parallel with integration capacitance 124. A non-inverting input of amplifier 122 is connected to a common mode voltage Vcm. For a given matrix element capacitance 100 ij, the output OUTC2V of capacitance-to-voltage converter 120 is a waveform at frequency fc having a voltage given by: Vout=Vcm+Csij/Cc*VH

As shown in FIG. 3, sense node S_(i) is coupled through a switch 130 to the inverting input of amplifier 122 and is connected through a switch 132 to Vcm. A parasitic capacitance to a floating node FL is represented by parasitic capacitance 140 i (CpSi). Capacitance CpSi is the capacitance from sense node Si to floating node FL. The floating node FL may be a transparent conductive layer between the touch screen and the display. Floating node FL is connected by a switch 142 to ground or to the common mode voltage Vcm. The capacitance of a finger touching or in proximity to capacitance 100 is represented by finger capacitance 150 (Cf).

A timing diagram that illustrates operation of the mutual capacitance sensing circuit of FIG. 3 is shown in FIG. 4. The timing diagrams shown in FIGS. 4, 6, 8, 9 and 11 are composed of phases 1A, 2A, 1B, 2B, 2 . . . etc. By convention, a switch that is having a control signal indexed as 1A is only closed during 1A and is open during all the other phases. This convention is applicable to FIG. 4, which illustrates FIG. 3 operation, to FIG. 6, which illustrates FIGS. 5A and 5B operation, to FIGS. 8 and 9, which illustrate FIGS. 7, 10 and 12 operation, and finally to FIG. 11, which illustrates another operation mode of FIG. 10. For example, switch 560 (FIG. 7), for which the control signal is M2A+M1B+S1A, will be open during phases 2A and 1B of the mutual capacitance sensing mode and during phase 1A of the self capacitance sensing mode. Also switches having a control signal indexed S2S indicates switches which are closed during the self sensing mode of the sense line Si, and switches having a control signal indexed S2F indicates switches which are closed during the self sensing mode of the force line Fj.

A waveform 200 represents the signal TX applied to force node F_(j). Waveform 200 may be a squarewave at frequency fc. A waveform 210 represents the output OUTC2V of amplifier 122. The amplitude of the output signal OUTC2V is representative of the value of the capacitance 100 ij being sensed. A waveform 220 represents a reset signal applied to switches 126 and 132 at a frequency 2fc of twice the squarewave input frequency. In the mutual capacitance sensing mode, the output OUTC2V is not affected by capacitance 140 i (CpSi), capacitance 150 (Cf) and capacitance 160 j (CpFj). Indeed the sense node Si is pre-charged to voltage Vcm during phase 1 (1A or 1B), and is connected to Vcm virtual ground during phase 2 (2A or 2B). Therefore no charge transfer occurs from capacitance 140 i (CpSi) or 150 (Cf) to capacitance 124 (Cc). Capacitance 160 j (CpFj) is driven directly by the chopper 110 j and therefore is not involved in any charge transfer to capacitance 124 (Cc).

A schematic block diagram of a single-ended self capacitance sensing circuit in accordance with embodiments of the invention is shown in FIG. 5A. FIG. 5A illustrates operation in the self capacitance sensing mode in a first phase when force node Fj is self-sensed while all sense nodes Si are boot-strapped. A capacitance-to-voltage converter 320 may include an amplifier 322 having an integration capacitance 324 (Cc) in a feedback path between an inverting input and an output of amplifier 322. A switch 326 is connected in parallel with integration capacitance 324 (Cc). A non-inverting input of amplifier 322 is connected to the common mode voltage Vcm.

A force node F_(j) of the capacitive touch matrix is connected through a switch 330 to the inverting input of amplifier 322. A voltage VH is coupled through a switch 340 j to force node F_(j), is coupled through a switch 342 j to floating node FL and is coupled through a switch 344 ij to all sense nodes S. Ground is coupled through a switch 350 j to force node F_(j), is coupled through a switch 352 j to floating node FL and is coupled through a switch 354 ij to all sense nodes S. Switches 340 j and 350 j implement a first input chopper, switches 342 j and 352 j implement a second input chopper, and switches 344 ij and 354 ij implement a third set of i input choppers. A parasitic capacitance between force node F_(j) and floating node FL is represented by parasitic capacitance 160 j (CpFj). A set of parasitic capacitances between force node Fj and all sense nodes Si is represented by a set of parasitic capacitances 100 ij (Csij) (all i). These capacitances are actually the mutual capacitances between the force node Fj to be self-sensed and all the sense nodes Si. A switch 362 is coupled between floating node FL and common mode voltage Vcm, and a set of switches 364 i is coupled between all sense nodes S_(i) and common mode voltage Vcm. The capacitance of a finger touching or in proximity to a conductor of the capacitive touch matrix is represented by finger capacitance 370 (Cf) connected between force node F_(j) and ground.

As indicated above, FIG. 5A illustrates operation in the self capacitance sensing mode in a first phase when force node Fj is self-sensed while all sense nodes Si are boot-strapped. FIG. 5B illustrates operation in the self capacitance sensing mode in a second phase when sense node Si is self-sensed while all force nodes Fj are boot-strapped. In FIGS. 5A and 5B, the roles of the force nodes and the sense nodes are reversed, and different sets of switches are utilized. It will be understood that the number of force nodes Fj and the number of sense nodes Si may be different. A complete scan of the capacitive touch matrix involves the first phase operations of FIG. 5A and the second phase operations of the FIG. 5B.

A timing diagram that illustrates operation of the self capacitance sensing circuit of FIGS. 5A and 5B is shown in FIG. 6. The timing diagram indicates the times when the various switches in the capacitance sensing circuit of FIGS. 5A and 5B are closed. A waveform 400 represents a transmit signal TX at force node Fj in the case of FIG. 5A, and represents a transmit signal TX at sense node Si in the case of FIG. 5B. As shown, the transmit signal TX is successively switched to voltage VH, common mode voltage Vcm and ground. A waveform 410 represents the output OUTC2V of amplifier 322. A waveform 420 represents a reset signal applied to switch 326 of the capacitance-to-voltage converter at the frequency 2fc of twice the input frequency. In the self capacitance sensing mode, when measuring finger capacitance 370 (Cf) on force node Fj, the output OUTC2V is not affected by capacitance 160 j (CpFj) and capacitances 100 ij (Csij all i). Indeed during the phase 1 (1A or 1B), floating node FL and all sense nodes Si are all driven to a same voltage that is applied to force node Fj. Therefore capacitances 160 j, 100 ij (all i) do have a charge that is exactly equal to zero in value. And during phase 2 (2A or 2B), floating node FL and all sense nodes Si are also connected to the same voltage Vcm and therefore the charge across the same capacitances 160 j, 100 ij (all i) remain zero in value. Therefore no charge is stored inside capacitances 160 (CpFj) and 100 ij (all i) during phase 1, or transferred to capacitance Cc during phase 2.

A schematic block diagram of a single-ended, dual mode capacitance sensing circuit in accordance with embodiments of the invention is shown in FIG. 7. The capacitance sensing circuit of FIG. 7 is configurable for operation in the mutual capacitance sensing mode or in the self capacitance sensing mode.

A capacitance-to-voltage converter 520 includes an amplifier 522 having an integration capacitance 524 (Cc) coupled between the inverting input and the output of amplifier 522. A switch 526 is connected in parallel with integration capacitance 524. A non-inverting input of amplifier 522 is connected to common mode voltage Vcm.

A transmit node TX is coupled through a switch 530 to the inverting input of amplifier 522, and transmit node TX is coupled through a switch 532 to common mode voltage Vcm. The force node F_(j) is coupled through a switch 540 to node TX, and the sense node S_(i) is coupled through a switch 542 to node TX. Sense node S_(i) is coupled through a switch 550 i to voltage VH, is coupled through a switch 552 i to common mode voltage Vcm, and is coupled through a switch 554 i to ground. Force node Fj is coupled through a switch 560 j to voltage VH, is coupled through a switch 562 j to common mode voltage Vcm, and is coupled through a switch 564 j to ground. Floating node FL is coupled through a switch 570 to voltage VH, is coupled through a switch 572 to common mode voltage Vcm, and is coupled through a switch 574 to ground. As explained previously, the operation in the mutual capacitance sensing mode is performed in such a way that the capacitance 100 ij (Csij) measurement is independent of capacitance 670 (CfF), capacitance 671 (CfS), capacitance 160 j (CpFj) and capacitance 140 i (CpSi), where parasitic capacitances CpSi and CpFj are respectively from sense node Si and force node Fj to floating node FL.

A timing diagram that illustrates operation of the dual mode capacitance sensing circuit of FIG. 7 in the mutual capacitance sensing mode is shown in FIG. 8. In FIG. 7, switches labeled with timing signals having the prefix “M” are utilized in the mutual capacitance sensing mode. The switches labeled with timing signals having the prefix “S” may not be utilized in the mutual capacitance sensing mode. As shown, some switches are utilized in both the mutual capacitance sensing mode and the self capacitance sensing mode. In FIG. 8, a waveform 600 comprising a squarewave at frequency fc is applied to force node F_(j) and is coupled through matrix element capacitance 100 ij (Csij) and sense node S_(i) to transmit node TX. The capacitance-to-voltage converter 520 provides an output OUTC2V, as indicated by waveform 610. The amplitude of the output OUTC2V is representative of the value of the capacitance Csij being sensed. A waveform 620 represents a reset signal applied to switches 526 and 532 at the frequency 2fc of twice the squarewave input frequency. As explained previously, the operation in the self capacitance sensing mode is performed in such a way that the capacitance 670 (CfF) measurement (when the force line is measured) or the capacitance 671 (CfS) (when the sense line is measured) is independent of capacitance 100 ij (Csij), capacitance 140 i (CpSi) and capacitance 160 j (CpFj).

A timing diagram that illustrates operation of the dual mode capacitance sensing circuit of FIG. 7 in the self capacitance sensing mode is shown in FIG. 9. Switches in FIG. 7 labeled with timing signals having the prefix “S” are involved in the self capacitance sensing mode. A waveform 700 represents the signal at transmit node TX. As shown, the waveform is successively switched to voltage VH, the common mode voltage Vcm and ground. When the column conductors of the capacitive touch matrix are being sensed, switch 540 is closed, and switches 560 j, 562 j and 564 j are controlled to produce waveform 700. When the line conductors of the capacitive touch matrix are being sensed, switch 542 is closed, and switches 550 i, 552 i and 554 i are controlled to generate waveform 700. A waveform 710 represents the output OUTC2V of amplifier 522. The amplitude of the output OUTC2V is representative of the finger capacitance 670 (CfF) or 671 (CfS) between the column or line conductor being sensed and ground. The waveform 720 represents a reset signal applied to switch 526 of the capacitance-to-voltage converter 520 at the frequency 2fc of twice the input frequency.

The timing signals, as shown in FIGS. 8 and 9, for controlling the dual mode capacitance sensing circuit in the mutual capacitance sensing mode or the self capacitance sensing mode may be generated by a controller 580. The controller 580 is programmed to generate synchronized timing signals for controlling the switches in the capacitance sensing circuit of FIG. 7. The switches may be implemented, for example, by transistors, and the on-off states of the transistors may be controlled by controller 580.

Whether mutual capacitance sensing or self capacitance sensing is performed, the output signal OUTC2V of the capacitance-to-voltage converter is chopped. In particular, the signal from the transmit node TX is chopped, while the offset and flicker noise of the amplifier 522 are not chopped. Therefore, the output OUTC2V of the capacitance-to-voltage converter 520 may be rectified, accumulated and filtered by an output chopper and an analog accumulator/filter. By these operations, the original signal, which is representative of the capacitance being sensed is restored and is free of the offset and flicker of the amplifier 522. Indeed, the output OUTC2V is alternately S+N and −S+N, and therefore after chopping it became S+N and S−N, the accumulator 850 (FIG. 10) being configured to accumulate the signal and to remove the noise. The offset and flicker of the amplifier are rejected to higher frequencies by the chopper. The white noise of the amplifier may be low pass filtered. The differential output of the accumulator can be amplified and then converted to digital domain for further processing.

A schematic diagram of a dual mode capacitance sensing circuit including a capacitance-to-voltage converter with a single-ended input and a differential output, in accordance with embodiments of the invention, is shown in FIG. 10. Like elements in FIGS. 7 and 10 have the same reference characters. A capacitance-to-voltage converter 820 may include a differential amplifier 822 having integration capacitance 524 connected in a feedback path between an inverting input and a first output of amplifier 822. The non-inverting input of differential amplifier 822 is connected to the common mode voltage Vcm. The switching circuit which provides signals to the capacitance-to-voltage converter 820 in the mutual capacitance sensing mode and in the self capacitance sensing mode may be as described above in connection with FIG. 7.

The differential outputs OUTC2VP and OUTC2VN of capacitance-to-voltage converter 820 are supplied through a differential output chopper 840 to a differential analog accumulator 850. The outputs of capacitance-to-voltage converter 820 are switched by output chopper 840 at frequency fc to produce DC outputs OUTCHP and OUTCHN that are representative of the capacitance being sensed. The output chopper 840 functions as a rectifier of the signals at its inputs.

The analog accumulator 850 accumulates DC voltage values produced by capacitance-to-voltage converter 820 on successive sensing cycles, over an accumulation period having a defined number NA of cycles. The DC outputs of output chopper 840 on each cycle are summed with intermediate accumulated values from previous cycles. After NA cycles, the analog accumulator 850 provides accumulated analog values INGP and INGN. The analog accumulator 850 also performs low pass filtering of wideband noise above its cutoff frequency. The outputs INGP and INGN of analog accumulator 850 may be supplied through an amplifier to an analog-to-digital converter (not shown) for conversion of the accumulated analog value to a digital value that represents the value of the capacitance being sensed.

Referring to FIG. 7, it may be shown that the output voltage swing of the capacitance-to-voltage converter 520 is Csij/Cc*VH for mutual capacitance sensing and is Cf/Cc*(VH−Vcm) or Cf/Cc*Vcm for self capacitance sensing. The output swing in the mutual capacitance sensing mode is balanced with respect to the common mode voltage Vcm, regardless of the value of voltage VH. This is not the case for the self capacitance sensing mode. If the value of voltage VH is 2*Vcm, the capacitance-to-voltage converter output is balanced, but a higher value of voltage VH produces a larger negative swing of the output voltage as compared to the positive swing of the output voltage. It is known that use of a high value of voltage VH is beneficial to the improvement of the SNR of the system.

Accordingly, a second method of operation in the self capacitance sensing mode is described, in which only the falling edges are used to transfer the charge from the finger capacitance Cf to the integration capacitance Cc. As a result, the output OUTC2V of the capacitance-to-voltage converter swings only in the negative direction. The output OUTC2V is therefore S+N after the falling edge of the input signal TX, and the output OUTC2V is +N when the input signal TX switches back to the high level prior to the next falling transition.

The self capacitance sensing mode with a high value of voltage VH is illustrated in the timing diagram of FIG. 11. It is assumed that voltage VH has a value greater than 2*Vcm. A waveform 900 represents the transmit signal TX applied to the force node F or the sense node S. The transmit signal TX switches between voltage VH and the common mode voltage Vcm. A waveform 910 represents the output OUTC2V of amplifier 522. As shown, the output of the capacitance-to-voltage converter 520 or 820 swings only in the negative direction. A waveform 920 represents a reset signal applied to switch 526 of the capacitance-to-voltage converter 520 or 820. The output OUTC2V is alternately S+N and +N, and therefore after chopping it becomes S+N and −N, the accumulator 850 being configured to accumulate the signal and to remove the noise. The signal amplitude once accumulated is [S=Cf/Cc*(VH−Vcm)] which is less than the dual edge forcing solution [2S=Cf/Cc*(VH−Vcm+Vcm)=Cf/Cc*VH], unless VH>3*Vcm. In that case, the method of FIG. 11 is superior to the dual edge method of FIG. 9 in terms of signal magnitude and noise removal, and therefore in terms of SNR performance.

A schematic diagram of a dual mode capacitance sensing circuit incorporating parasitic capacitance cancellation is shown in FIG. 12. Like elements in FIGS. 7 and 12 have the same reference characters. Capacitance 100 ij (Csij) between force node F_(j) and S_(i) represents the capacitance between column conductor and line conductor of the capacitive touch matrix. During the mutual capacitance sensing mode, capacitance ΔCsij represents the change in capacitance produced by a finger or other object touching or in proximity to the intersection between the column conductor and the line conductor of the capacitive touch matrix. To cancel the fixed value of the capacitance 100 ij, a cancellation capacitance 950 (Cx) may be used. The cancellation capacitance 950 is connected to transmit node TX, and the complement of the transmit signal TX is supplied through cancellation capacitance 950 to capacitance-to-voltage converter 520. The complement of transmit signal TX may be an inverted squarewave at modulation frequency fc. Ideally, the cancellation capacitance 950 is equal in value to the matrix element capacitance 100, so that the output of the capacitance-to-voltage converter 520 is zero, except when a finger or other object contacts or is in proximity to matrix element capacitance 100 ij.

During the self capacitance sensing mode sensing Fj (or Si), capacitance 670 (CfF) (or 671 (CfS)) represents the change in capacitance versus ground produced by a finger or other object touching or in proximity to the column conductor or line conductor. Whenever floating node FL is not available, the bootstrap technique can't be fully used. Indeed, the capacitance 100 ij (Csij) can still be bootstrapped as sense nodes Si are available, but the capacitance 160 j (CpFj) (or 140 i CpSi) parasitic capacitances are not bootstrapped. Also capacitance 954 (Cpl) (the internal parasitic capacitances of the sensing channel) can't be bootstrapped. Therefore it may be necessary to cancel the remaining fixed value of the parasitic capacitances 160 j (CpFj) (or 140 i CpSi) and 954 (Cpl), and a cancellation capacitance 950 (Cx) may be used. The cancellation capacitance 950 is connected to transmit node TX, and the complement of the transmit signal TX is supplied through cancellation capacitance 950 to capacitance-to-voltage converter 520. The complement of transmit signal TX may be an inverted squarewave at modulation frequency fc. Ideally, the cancellation capacitance 950 is equal in value to the sum of parasitic capacitances 160 j (CpFj) (or 140 i CpSi) and 954 (Cpl), so that the output of the capacitance-to-voltage converter 520 is zero, except when a finger or other object referenced to ground contacts or is in proximity to the line or column conductors.

Such alterations, modifications, and improvements are intended to be part of this disclosure, and are intended to be within the spirit and the scope of the present invention. Accordingly, the foregoing description is by way of example only and is not intended to be limiting. The present invention is limited only as defined in the following claims and the equivalents thereto. 

What is claimed is:
 1. A dual mode capacitance sensing circuit, comprising: a capacitance-to-voltage converter including an amplifier and an integration capacitance coupled between an output and an inverting input or the amplifier; and a dual mode switching circuit responsive to mutual mode control signals for controlling signals supplied from a capacitive touch matrix to the capacitance-to-voltage converter in a mutual capacitance sensing mode and responsive to self mode control signals for controlling signals supplied from the capacitive touch matrix to the capacitance-to-voltage converter in a self capacitance sensing mode, wherein the capacitance sensing circuit is configurable for operation in the mutual capacitance sensing mode or the self capacitance sensing mode; said dual mode switching circuit comprising: first and second sense node switching elements coupled between a sense node of the capacitive touch matrix and a first input voltage and a second input voltage, respectively; first and second force node switching elements coupled between a force node of the capacitive touch matrix and the first input voltage and second input voltage, respectively; and first and second floating node switching elements coupled between a floating node of the capacitive touch matrix and the first input voltage and second input voltage, respectively.
 2. A dual mode capacitance sensing circuit as defined in claim 1, wherein the capacitance-to-voltage converter further comprises a switching element connected across the integration capacitance to reset the capacitance-to-voltage converter.
 3. A dual mode capacitance sensing circuit as defined in claim 1, wherein the capacitance-to-voltage converter further comprises a switching element connected in series with the inverting input of the amplifier and configured to connect a transmit node to the inverting input during portions of the mutual and self capacitance sensing modes.
 4. A dual mode capacitance sensing circuit as defined in claim 3, wherein the dual mode switching circuit further comprises a switching element configured to connect the transmit node to a common mode voltage during at least a portion of the mutual capacitance sensing mode.
 5. A dual mode capacitance sensing circuit as defined in claim 3, wherein the dual mode switching circuit further comprises a switching element configured to connect the transmit node to the sense node during at least a portion of the mutual capacitance sensing mode and at least a portion of the self capacitance sensing mode.
 6. A dual mode capacitance sensing circuit as defined in claim 5, wherein the dual mode switching circuit further comprises a switching element configured to connect the transmit node to the force node during at least a portion of the self capacitance sensing mode.
 7. A dual mode capacitance sensing circuit as defined in claim 1, wherein the capacitance-to-voltage converter has a single-ended input and a differential output.
 8. A dual mode capacitance sensing circuit as defined in claim 1, wherein the dual mode switching circuit comprises a third force node switching element coupled between the force node of the capacitive touch matrix and a common mode input voltage, and a third sense node switching element coupled between the sense node of the capacitive touch matrix and the common mode input voltage.
 9. A dual mode capacitance sensing circuit as defined in claim 1, wherein the dual mode switching circuit further comprises a third floating node switching element coupled between the floating node of the capacitive touch matrix and the common mode input voltage.
 10. A dual mode capacitance sensing circuit as defined in claim 1, wherein the second floating node switching element is configured to connect the floating node to ground during portions of the mutual capacitance sensing mode.
 11. A dual mode capacitance sensing circuit as defined in claim 1, wherein the dual mode switching circuit is configured to connect the sense node, the force node and the floating node, respectively, to a common mode voltage during portions of the self capacitance sensing mode.
 12. A dual mode capacitance sensing circuit as defined in claim 1, further comprising a capacitance cancellation circuit coupled to the inverting input of the amplifier and operable in the self capacitance sensing mode, the capacitance cancellation circuit including a cancellation capacitance equal in value to parasitic capacitances of the capacitive touch matrix and an internal parasitic capacitance of the capacitance sensing circuit, wherein an excitation signal is applied to the capacitive touch matrix and the complement of the excitation signal is applied to the cancellation capacitance.
 13. A dual mode capacitance sensing circuit as defined in claim 1, wherein the sense node is alternately precharged to a common mode voltage and connected to a common mode voltage virtual ground during operation by the dual mode switching circuit in the mutual capacitance sensing mode.
 14. A dual mode capacitance sensing circuit as defined in claim 1, wherein the force node and the sense node are driven to the same voltage during operation by the dual mode switching circuit in the self capacitance sensing mode so that parasitic capacitances have zero charge.
 15. A dual mode capacitance sensing circuit as defined in claim 1, wherein an excitation voltage greater than two times a common mode voltage of the capacitance-to-voltage converter is applied to the capacitive touch matrix during operation in the self capacitance sensing mode.
 16. A dual mode capacitance sensing circuit as defined in claim 1, wherein the self capacitance sensing mode includes a first phase wherein the force node of the capacitive touch matrix is sensed while all sense nodes are bootstrapped and a second phase wherein the sense node is sensed while all force nodes are bootstrapped.
 17. A touch screen system comprising a capacitive touch matrix, the dual mode capacitance sensing circuit as defined in claim 1, and a controller to provide mutual mode control signals and self mode signals to the dual mode capacitance sensing circuit.
 18. A dual mode capacitance sensing circuit comprising: a capacitance-to-voltage converter including an amplifier and an integration capacitance coupled between an output and an inverting input or the amplifier; and a dual mode switching circuit responsive to mutual mode control signals for controlling signals supplied from a capacitive touch matrix to the capacitance-to-voltage converter in a mutual capacitance sensing mode and responsive to self mode control signals for controlling signals supplied from the capacitive touch matrix to the capacitance-to-voltage converter in a self capacitance sensing mode, wherein the capacitance sensing circuit is configurable for operation in the mutual capacitance sensing mode or the self capacitance sensing mode, wherein the capacitive touch matrix includes force nodes and sense nodes, further comprising a capacitance cancellation circuit coupled to the inverting input of the amplifier and operable in the mutual capacitance sensing mode, the capacitance cancellation circuit including a cancellation capacitance equal in value to a matrix element capacitance of the capacitive touch matrix and configured to apply an excitation signal to a force node of the capacitive touch matrix and apply the complement of the excitation signal to the cancellation capacitance.
 19. A method for sensing capacitance, comprising: providing a capacitance sensing circuit including capacitance-to-voltage converter and a dual mode switching circuit coupled between a capacitive touch matrix and the capacitance-to-voltage converter; providing a floating node for the capacitive touch matrix; controlling operation of the capacitance sensing circuit for mutual capacitance sensing in response to selection of a mutual capacitance sensing mode; controlling operation of the capacitance sensing circuit for self capacitance sensing in response to selection of a self capacitance sensing mode; and controlling a switching circuit coupled to the floating node to selectively connect the floating node to an input voltage, a common mode voltage and a ground voltage during the mutual and self-capacitance sensing modes.
 20. A method as defined in claim 19, wherein the capacitive touch matrix includes force nodes and sense nodes, and wherein controlling operation of the capacitance sensing circuit for mutual capacitance sensing comprises alternately precharging the sense nodes to the common mode voltage and connecting the sense nodes to a common mode voltage virtual ground.
 21. A method as defined in claim 19, wherein the capacitive touch matrix includes force nodes and sense nodes, and wherein controlling operation of the capacitance sensing circuit for self capacitance sensing comprises driving the force nodes and the sense nodes to the same voltage during operation so that parasitic capacitances have zero charge.
 22. A method as defined in claim 19, wherein controlling operation of the capacitance sensing circuit for self capacitance sensing comprises coupling to the capacitance-to-voltage converter a cancellation capacitance equal in value to the parasitic capacitances of the capacitive touch matrix and the internal parasitic capacitance of the capacitance sensing circuit, applying an excitation signal to the capacitive touch matrix and applying the complement of the excitation signal to the cancellation capacitance.
 23. A method as defined in claim 19, wherein the capacitance-to-voltage converter has an associated common mode voltage and wherein controlling operation of the capacitance sensing circuit for self capacitance sensing comprises applying an excitation voltage to the capacitive touch matrix that is greater than two times the common mode voltage of the capacitance-to-voltage converter.
 24. A method as defined in claim 19, wherein the capacitive touch matrix includes force nodes and sense nodes and wherein controlling operation of the capacitance sensing circuit for self capacitance sensing comprises operating in a first phase wherein a force node is sensed while all sense nodes are bootstrapped and operating in a second phase wherein a sense node is sensed while all force nodes are bootstrapped.
 25. A method for sensing capacitance, comprising: providing a capacitance sensing circuit including capacitance-to-voltage converter and a dual mode switching circuit coupled between a capacitive touch matrix and the capacitance-to-voltage converter; controlling operation of the capacitance sensing circuit for mutual capacitance sensing in response to selection of a mutual capacitance sensing mode; and controlling operation of the capacitance sensing circuit for self capacitance sensing in response to selection of a self capacitance sensing mode, wherein the capacitive touch matrix includes force nodes and sense nodes, and wherein controlling operation of the capacitance sensing circuit for mutual capacitance sensing comprises: coupling to the capacitance-to-voltage converter a cancellation capacitance equal in value to a matrix element capacitance of the capacitive touch matrix, applying an excitation signal to a force node of the capacitive touch matrix, and applying the complement of the excitation signal to the cancellation capacitance.
 26. A capacitance sensing circuit coupled to a capacitive touch matrix and operable in a mutual capacitance sensing mode or in a self capacitance sensing mode, comprising: a capacitance-to-voltage converter comprising an amplifier and an integration capacitance coupled between an output and an inverting input of the amplifier; first, second and third sense node switching elements coupled between a sense node of the capacitive touch matrix and an input voltage, a common mode voltage and ground, respectively; first, second and third force node switching elements coupled between a force node of the capacitive touch matrix and the input voltage, the common mode voltage and ground, respectively; first, second and third floating node switching elements coupled between a floating node and the input voltage, the common mode voltage and ground, respectively; a first switching element coupled between the sense node and a transmit node; a second switching element coupled between the force node and the transmit node; and an input switching element coupled between the transmit node and the inverting input of the amplifier.
 27. A capacitance sensing circuit as defined in claim 26, wherein the capacitance-to-voltage converter has a single ended input and a differential output.
 28. A capacitance sensing circuit as defined in claim 26, further comprising a capacitance cancellation circuit coupled to the inverting input of the amplifier and operable in the mutual capacitance sensing mode, the capacitance cancellation circuit including a cancellation capacitance equal in value to a matrix element capacitance of the capacitive touch matrix, wherein an excitation signal is applied to a force node of the capacitive touch matrix and the complement of the excitation signal is applied to the cancellation capacitance.
 29. A capacitance sensing circuit as defined in claim 26, further comprising a capacitance cancellation circuit coupled to the inverting input of the amplifier and operable in the self capacitance sensing mode, the capacitance cancellation circuit including a cancellation capacitance equal in value to parasitic capacitances of the capacitive touch matrix and an internal parasitic capacitance of the capacitance sensing circuit, wherein an excitation signal is applied to the capacitive touch matrix and the complement of the excitation signal is applied to cancellation capacitance.
 30. A touch screen system comprising a capacitive touch matrix, the capacitance sensing circuit of claim 26 and a controller configured to provide control signals to the switching elements of the capacitance sensing circuit. 